IAUC60N10S5L110ATMA1 vs BSC070N10NS5ATMA1 Comparison
Detailed side-by-side comparison of IAUC60N10S5L110ATMA1 by Infineon and BSC070N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N10S5L110ATMA1
IAUC60N10S5L110ATMA1 - 100V 11mΞ© N-Ch OptiMOS 5 | Infineon
IAUC60N10S5L110ATMA1 β Active
Specification Comparison
| Parameter | IAUC60N10S5L110ATMA1 | BSC070N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $0.68 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOSβ’-5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | β |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | β |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W | β |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΞ© | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V | β |
| Package | PG-TDSON-8-33 (TDSON-8 Single) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: min/max operating temperature] | β |
| Gate-Source Voltage (V<sub>GS</sub>) Max | [DATA_NEEDED: VGS max rating] | β |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Qg at specified Vgs] | β |
| Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: single-pulse avalanche energy] | β |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) | β |
| Packing Code | ATMA1 (Tape & Reel) | β |
| MSL Level | 1 (per LCSC datasheet snippet) | 1 (per JEDEC J-STD-020) |
| Halogen-Free | Yes (per Infineon product classification) | β |
| Customer Info / FGR | J52 (per Infineon product data) | β |
| Technology | β | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) max | β | 100 V |
| Continuous Drain Current (ID) at TC=25C | β | 80 A |
| RDS(on) max @ VGS=10V | β | 7 mOhm |
| Gate-Source Voltage (VGS) max | β | 20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: typical Qg] |
| Power Dissition at TC=25C (Ptot) | β | 83 W |
| Power Dissipation at TA=25C | β | 2.5 W |
| Operating Junction Temperature Range | β | -55 C to +150 C |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| Typical Application | β | Synchronous rectification in SMPS |