IAUC60N10S5L110ATMA1 vs IAUCN10S5L110TATMA1 Comparison
Detailed side-by-side comparison of IAUC60N10S5L110ATMA1 by Infineon and IAUCN10S5L110TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N10S5L110ATMA1 - 100V 11mΞ© N-Ch OptiMOS 5 | Infineon
IAUC60N10S5L110ATMA1 β ActiveInfineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N10S5L110ATMA1 | IAUCN10S5L110TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $2.08 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’-5 | OptiMOS 5 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | β |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | β |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W | β |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΞ© | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V | β |
| Package | PG-TDSON-8-33 (TDSON-8 Single) | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: min/max operating temperature] | β |
| Gate-Source Voltage (V<sub>GS</sub>) Max | [DATA_NEEDED: VGS max rating] | β |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Qg at specified Vgs] | β |
| Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: single-pulse avalanche energy] | β |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) | β |
| Packing Code | ATMA1 (Tape & Reel) | β |
| MSL Level | 1 (per LCSC datasheet snippet) | MSL1 (260Β°C peak reflow) |
| Halogen-Free | Yes (per Infineon product classification) | β |
| Customer Info / FGR | J52 (per Infineon product data) | β |
| Technology | β | N-Channel MOSFET, Trench, Logic Level |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at Tj | β | 61 A |
| On-Resistance RDS(on) max at VGS=10V | β | 11.3 mΞ© |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at Tc | β | 88 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Storage Temperature | β | [DATA_NEEDED: storage temperature] |
| Avalanche Rated | β | 100% Avalanche Tested |
| Automotive Qualification | β | AEC-Q101 Extended Qualification |
| RoHS Status | β | Compliant |