IAUC60N10S5L110ATMA1 vs IPB35N10S3L26ATMA2 Comparison
Detailed side-by-side comparison of IAUC60N10S5L110ATMA1 by Infineon and IPB35N10S3L26ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N10S5L110ATMA1
IAUC60N10S5L110ATMA1 - 100V 11mΞ© N-Ch OptiMOS 5 | Infineon
IAUC60N10S5L110ATMA1 β Active
Specification Comparison
| Parameter | IAUC60N10S5L110ATMA1 | IPB35N10S3L26ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’-5 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | β |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | β |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W | β |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΞ© | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V | β |
| Package | PG-TDSON-8-33 (TDSON-8 Single) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: min/max operating temperature] | -55C to +175C |
| Gate-Source Voltage (V<sub>GS</sub>) Max | [DATA_NEEDED: VGS max rating] | β |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Qg at specified Vgs] | β |
| Avalanche Energy (E<sub>AS</sub>) | [DATA_NEEDED: single-pulse avalanche energy] | β |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) | β |
| Packing Code | ATMA1 (Tape & Reel) | β |
| MSL Level | 1 (per LCSC datasheet snippet) | β |
| Halogen-Free | Yes (per Infineon product classification) | β |
| Customer Info / FGR | J52 (per Infineon product data) | β |
| Product Family | β | OptiMOS Power-Transistor |
| Drain-Source Voltage (Vds) | β | 100 V |
| Continuous Drain Current (Id) at Tc | β | 35 A |
| Pulsed Drain Current | β | 180 A |
| Power Dissipation (Pd) at Tc | β | 71 W |
| RDS(on) (typical) | β | 26.3 mOhm |
| Number of Pins | β | 3 |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical value] |
| RoHS Status | β | Compliant |
| Automotive Qualified | β | Yes (per Infineon product page classification) |