IAUC64N08S5L075ATMA1 vs IAUC80N04S6N036ATMA1 Comparison
Detailed side-by-side comparison of IAUC64N08S5L075ATMA1 by Infineon and IAUC80N04S6N036ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 β ActiveInfineon
IAUC80N04S6N036ATMA1
IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon
IAUC80N04S6N036ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC64N08S5L075ATMA1 | IAUC80N04S6N036ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUC64N08S5L075ATMA1 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOSβ’ 5 | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 64 A (TJ-limited) | β |
| On-Resistance (RDS(on)) max at VGS=10V | 7.5 mΞ© | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage absolute maximum] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (PD) at TC=25Β°C | 75 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Compliance | Compliant | β |
| MSL Level | MSL1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Number of Pins | 8 | β |
| Part Family | β | OptiMOS-6 40 V |
| Polarity | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Gate-Source Voltage (V_GS) | β | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at T_C | β | 80 A |
| Power Dissipation (P_D) at T_C | β | 50 W |
| On-Resistance R_DS(on) max at V_GS=10V | β | 3.6 mOhm |
| On-Resistance R_DS(on) max at V_GS=4.5V | β | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Operating Temperature Range | β | -55 C to +175 C |
| AEC-Q101 Qualification | β | Qualified (Automotive) |
| Terminal Finish | β | Tin (Sn) (e3 per JESD-609) |
| Peak Reflow Temperature | β | 260 C (per JEDEC J-STD-020) |
| Compliance - RoHS | β | Compliant |
| Compliance - REACH | β | Compliant |