IAUC64N08S5L075ATMA1 vs IAUZ20N08S5L300ATMA1 Comparison
Detailed side-by-side comparison of IAUC64N08S5L075ATMA1 by Infineon and IAUZ20N08S5L300ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 β ActiveInfineon
IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ20N08S5L300ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC64N08S5L075ATMA1 | IAUZ20N08S5L300ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUC64N08S5L075ATMA1 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOSβ’ 5 | Trench MOSFET (OptiMOS-5) |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 64 A (TJ-limited) | β |
| On-Resistance (RDS(on)) max at VGS=10V | 7.5 mΞ© | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage absolute maximum] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 10.5 nC @ 10 V |
| Power Dissipation (PD) at TC=25Β°C | 75 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55Β°C to +175Β°C |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Compliance | Compliant | β |
| MSL Level | MSL1 (per JEDEC J-STD-020) | β |
| Number of Pins | 8 | β |
| Product Family | β | OptiMOS-5 |
| Polarity | β | N-Channel |
| Drain-Source Voltage (Vds) | β | 80 V |
| Continuous Drain Current (Id) | β | 20 A (Tc) |
| Power Dissipation (Pd) | β | 30 W (Tc) |
| On-State Resistance (Rds(on)) | β | 30 mΞ© @ 10 A, 10 V |
| Gate Threshold Voltage (Vgs(th)) | β | Β±20 V (max Vgs rating) |
| Input Capacitance (Ciss) | β | 599 pF @ 40 V |
| Qualification | β | AEC-Q101 (automotive) |
| RoHS Status | β | Compliant |