IAUC64N08S5L075ATMA1 vs IAUZ40N08S5N100ATMA1 Comparison

Detailed side-by-side comparison of IAUC64N08S5L075ATMA1 by Infineon and IAUZ40N08S5N100ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUZ40N08S5N100ATMA1

IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ40N08S5N100ATMA1 ✓ Active

Specification Comparison

Parameter IAUC64N08S5L075ATMA1 IAUZ40N08S5N100ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.71
Manufacturer Infineon Technologies
Part Number IAUC64N08S5L075ATMA1
Transistor Type N-Channel MOSFET
Technology OptiMOS™ 5 OptiMOS-5 N-Channel MOSFET
Drain-Source Voltage (VDS) 80 V 80 V
Continuous Drain Current (ID) at TC=25°C 64 A (TJ-limited)
On-Resistance (RDS(on)) max at VGS=10V 7.5 mΩ
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage absolute maximum]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TC=25°C 75 W
Operating Junction Temperature -55 °C to +175 °C
Package PG-TDSON-8-33 (5x6 mm) PG-TDSON-8 (S3O8) 3.3 × 3.3 mm
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS Compliance Compliant
MSL Level MSL1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Number of Pins 8
Continuous Drain Current (ID, Tc=25°C) 40 A
Power Dissipation (PD, Tc=25°C) 68 W
On-Resistance RDS(on) max 10 mΩ @ VGS=10 V, ID=20 A
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg typ 24.2 nC @ VGS=10 V
Input Capacitance Ciss 1591 pF @ VDS=40 V
Gate-Source Voltage VGS max ±20 V
Operating Temperature Range -55 °C to +175 °C (TJ)
RoHS Status Compliant
Channel Type N-Channel

Datasheets & Resources

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