IAUC64N08S5L075ATMA1 vs IAUZN04S7L030ATMA1 Comparison

Detailed side-by-side comparison of IAUC64N08S5L075ATMA1 by Infineon and IAUZN04S7L030ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUC64N08S5L075ATMA1 IAUZN04S7L030ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.36
Manufacturer Infineon Technologies
Part Number IAUC64N08S5L075ATMA1
Transistor Type N-Channel MOSFET
Technology OptiMOS™ 5
Drain-Source Voltage (VDS) 80 V 40 V
Continuous Drain Current (ID) at TC=25°C 64 A (TJ-limited)
On-Resistance (RDS(on)) max at VGS=10V 7.5 mΩ
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage absolute maximum]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC=25°C 75 W
Operating Junction Temperature -55 °C to +175 °C
Package PG-TDSON-8-33 (5x6 mm) PG-TSDSON-8-44 (S3O8) 3x3 mm²
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 (Automotive OptiMOS)
RoHS Compliance Compliant Compliant
MSL Level MSL1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Number of Pins 8
Continuous Drain Current (ID, Tc=25°C) 60 A
Pulsed Drain Current (IDM, Tj) 100 A
On-State Resistance (RDS(on), VGS=10V max) 3.05 mΩ
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (PD, Tc=25°C) 58 W
Operating Junction Temperature (Tj) -55C to +175C
Technology Family OptiMOS-7
Channel Type N-Channel

Datasheets & Resources

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