IAUCN04S7L042GATMA1 vs IAUC120N04S6N010ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L042GATMA1 by Infineon and IAUC120N04S6N010ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L042GATMA1
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 β ActiveInfineon
IAUC120N04S6N010ATMA1
IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7L042GATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.68 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 7 40V | β |
| Technology | Trench N-Channel MOSFET | OptiMOS 6 |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, Tj) | 77 A | β |
| Maximum Power Dissipation (PD, Tc) | 50 W | β |
| Package | PG-THSOG-4 (SSO4G 5x6) leaded surface mount | PG-TDSON-8-34 (5x6 mm leadless) |
| Mounting Type | Surface Mount (IMS substrate / FR4 with thermal vias) | Surface Mount |
| Operating Temperature Range | -55C to +175C (Tj) | -55 Β°C to +175 Β°C (TJ, per Infineon OptiMOS 6 family) |
| Polarity / Channel Type | N-Channel enhancement mode | β |
| Automotive Qualified | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Packing | Tape & Reel (per -ATMA1 suffix) | β |
| Target Substrate | IMS substrate and legacy FR4 designs | β |
| On-State Resistance RDS(on) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg @ VGS=10V] | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | β | 40 V |
| Continuous Drain Current (Id, Tc) | β | 150 A |
| Power Dissipation (Pd, Tc) | β | 150 W |
| RDS(on) at VGS=10V (typ) | β | 1.0 mΞ© |
| RDS(on) at VGS=10V (max per LCSC excerpt) | β | 1.03 mΞ© |
| Gate-Source Threshold (VGS(th), typ) | β | 3 V (at 90 Β΅A) |
| Automotive Qualification | β | AEC-Q101 |
| Gate Drive Recommendation | β | 10 V VGS for full RDS(on) spec |
| Polarity | β | Single N-channel |