IAUCN04S7L042GATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L042GATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L042GATMA1
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7L042GATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 40V | β |
| Technology | Trench N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tj) | 77 A | β |
| Maximum Power Dissipation (PD, Tc) | 50 W | β |
| Package | PG-THSOG-4 (SSO4G 5x6) leaded surface mount | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Mounting Type | Surface Mount (IMS substrate / FR4 with thermal vias) | Surface Mount |
| Operating Temperature Range | -55C to +175C (Tj) | β |
| Polarity / Channel Type | N-Channel enhancement mode | β |
| Automotive Qualified | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Packing | Tape & Reel (per -ATMA1 suffix) | β |
| Target Substrate | IMS substrate and legacy FR4 designs | β |
| On-State Resistance RDS(on) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg @ VGS=10V] | β |
| Part Series | β | OptiMOS 6 |
| Configuration | β | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Automotive Qualification | β | AEC-Q101 (per part number suffix) |