IAUCN04S7L042GATMA1 vs IAUCN04S7N019DATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L042GATMA1 by Infineon and IAUCN04S7N019DATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L042GATMA1
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 β ActiveInfineon
IAUCN04S7N019DATMA1 - 40V Dual N-Channel MOSFET Array | Infineon
IAUCN04S7N019DATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7L042GATMA1 | IAUCN04S7N019DATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $1.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 40V | β |
| Technology | Trench N-Channel MOSFET | OptiMOS 7 40V |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tj) | 77 A | β |
| Maximum Power Dissipation (PD, Tc) | 50 W | β |
| Package | PG-THSOG-4 (SSO4G 5x6) leaded surface mount | PG-TDSON-8-60 (SuperSO8) |
| Mounting Type | Surface Mount (IMS substrate / FR4 with thermal vias) | Surface Mount |
| Operating Temperature Range | -55C to +175C (Tj) | β |
| Polarity / Channel Type | N-Channel enhancement mode | β |
| Automotive Qualified | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020, family default) |
| Packing | Tape & Reel (per -ATMA1 suffix) | β |
| Target Substrate | IMS substrate and legacy FR4 designs | β |
| On-State Resistance RDS(on) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg @ VGS=10V] | β |
| Configuration | β | Dual N-Channel (array) |
| Continuous Drain Current (ID, Tc) | β | 160 A (Tj) |
| Power Dissipation (PD, Tc) | β | 96 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Input Capacitance (Ciss, typ.) | β | 1.465 nF |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| On-Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typ] |
| Automotive Qualification | β | AEC-Q101 (family) |
| ESD Protection | β | Yes (gate integrated) |