IAUCN04S7L050HATMA1 vs IAUC100N04S6N022ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L050HATMA1 by Infineon and IAUC100N04S6N022ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L050HATMA1
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΞ© | Infineon
IAUCN04S7L050HATMA1 β ActiveInfineon
IAUC100N04S6N022ATMA1
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7L050HATMA1 | IAUC100N04S6N022ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.83 | $0.82 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOSβ’ 7 | β |
| Configuration | Dual N-Channel (Dual Drain, Half-Bridge) | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID), Tc=25Β°C | 65 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max @ VGS=10V | 5.04 mΞ© | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (PD) @ Tc=25Β°C | 40 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-57 (SuperSO8 half-bridge) | PG-TDSON-8 (5x6 mm) leadless |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (family-level, automotive grade) | AEC-Q100 (IAUC family) |
| Technology | Trench MOSFET, OptiMOSβ’ 7 40V | OptiMOS 6, N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | β | 40 V |
| Continuous Drain Current (I_D, Tc) | β | 100 A |
| Power Dissipation (P_D, Tc) | β | 75 W |
| R_DS(on) (typ at V_GS=10V) | β | 2.2 mOhm |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Polarity | β | N-Channel enhancement mode |
| Pin Count | β | 8 |
| Gate Threshold V_GS(th) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | β | [DATA_NEEDED: total gate charge] |
| Lead-Free | β | Yes |