IAUCN04S7L050HATMA1 vs IAUC100N04S6N028ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L050HATMA1 by Infineon and IAUC100N04S6N028ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L050HATMA1
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ ActiveInfineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUCN04S7L050HATMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.83 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | OptiMOS 6 40V |
| Configuration | Dual N-Channel (Dual Drain, Half-Bridge) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID), Tc=25°C | 65 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.04 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) @ Tc=25°C | 40 W | — |
| Operating Junction Temperature | -55 °C to +175 °C | — |
| Package | PG-TDSON-8-57 (SuperSO8 half-bridge) | PG-TDSON-8 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | — |
| RoHS Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (family-level, automotive grade) | — |
| Technology | Trench MOSFET, OptiMOS™ 7 40V | MOSFET (Metal Oxide) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 100 A |
| Pulsed Drain Current (I_DM) | — | 400 A |
| R_DS(on) max @ V_GS=10V | — | 2.8 mΩ (typical) |
| Gate Threshold Voltage (V_GS(th)) | — | 1.5 V to 2.5 V |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g in nC] |
| Power Dissipation (P_D) at T_C=25°C | — | 62 W |
| Operating Temperature Range | — | -55 °C to +175 °C |
| Automotive Qualified | — | Yes |