IAUCN04S7L050HATMA1 vs IAUC60N10S5L110ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L050HATMA1 by Infineon and IAUC60N10S5L110ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L050HATMA1
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ ActiveInfineon
IAUC60N10S5L110ATMA1
IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon
IAUC60N10S5L110ATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUCN04S7L050HATMA1 | IAUC60N10S5L110ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.83 | $0.66 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | OptiMOS™-5 |
| Configuration | Dual N-Channel (Dual Drain, Half-Bridge) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID), Tc=25°C | 65 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.04 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) @ Tc=25°C | 40 W | — |
| Operating Junction Temperature | -55 °C to +175 °C | — |
| Package | PG-TDSON-8-57 (SuperSO8 half-bridge) | PG-TDSON-8-33 (TDSON-8 Single) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per LCSC datasheet snippet) |
| RoHS Status | Compliant | — |
| Automotive Qualification | AEC-Q101 (family-level, automotive grade) | — |
| Technology | Trench MOSFET, OptiMOS™ 7 40V | — |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>, Tc) | — | 60 A |
| Power Dissipation (P<sub>D</sub>, Tc) | — | 88 W |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | — | 11 mΩ |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | 1.2 V |
| Operating Temperature Range | — | [DATA_NEEDED: min/max operating temperature] |
| Gate-Source Voltage (V<sub>GS</sub>) Max | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Q<sub>G</sub>) | — | [DATA_NEEDED: Qg at specified Vgs] |
| Avalanche Energy (E<sub>AS</sub>) | — | [DATA_NEEDED: single-pulse avalanche energy] |
| Lead-Free / RoHS | — | Yes (RoHS compliant per LCSC listing) |
| Packing Code | — | ATMA1 (Tape & Reel) |
| Halogen-Free | — | Yes (per Infineon product classification) |
| Customer Info / FGR | — | J52 (per Infineon product data) |