IAUCN04S7L050HATMA1 vs IAUCN04S7L014ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L050HATMA1 by Infineon and IAUCN04S7L014ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L050HATMA1
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ Active
Specification Comparison
| Parameter | IAUCN04S7L050HATMA1 | IAUCN04S7L014ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.83 | $1.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | OptiMOS 5 40V Automotive |
| Configuration | Dual N-Channel (Dual Drain, Half-Bridge) | Single N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID), Tc=25°C | 65 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.04 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Total gate charge Qg] |
| Power Dissipation (PD) @ Tc=25°C | 40 W | — |
| Operating Junction Temperature | -55 °C to +175 °C | — |
| Package | PG-TDSON-8-57 (SuperSO8 half-bridge) | PG-TDSON-8-34 (TDSON EP, 8-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (family-level, automotive grade) | — |
| Technology | Trench MOSFET, OptiMOS™ 7 40V | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) | — | 120 A |
| On-Resistance RDS(on) Max | — | 1.43 mΩ |
| Gate Threshold Voltage | — | [DATA_NEEDED: Gate threshold voltage] |
| Power Dissipation (Pd) | — | [DATA_NEEDED: Power dissipation Pd] |
| Operating Temperature Range | — | -55°C to +175°C (typical automotive MOSFET range) |
| Qualification | — | AEC-Q101 (Automotive) |