IAUCN04S7N006ATMA1 vs IAUC100N04S6L020ATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N006ATMA1 by Infineon and IAUC100N04S6L020ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N006ATMA1

IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon

IAUCN04S7N006ATMA1 βœ“ Active
Infineon
IAUC100N04S6L020ATMA1

IAUC100N04S6L020ATMA1 - 40V 100A 2mΞ© OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L020ATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N006ATMA1 IAUC100N04S6L020ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $0.86
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) 175 A β€”
On-State Resistance (RDS(on)) 0.63 mOhm (typ at VGS = 10 V) β€”
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] β€”
Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Technology OptiMOS 5 (trench) OptiMOS 6
Package PG-TDSON-8-43 PG-TDSON-8 (SS08, 5x6 mm leadless)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +175 C -55 Β°C to +175 Β°C (TJ)
Junction Temperature Max 175 C β€”
Power Dissipation Max (Pd) [DATA_NEEDED: Pd max] β€”
Gate Charge Total (Qg) [DATA_NEEDED: Qg total] β€”
Automotive Qualification AEC-Q101 β€”
Lead-Free / RoHS Yes (compliant) β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
Drain-Source Breakdown Voltage V(BR)DSS β€” 40 V
Continuous Drain Current (Tc) β€” 100 A
Power Dissipation (Tc) β€” 75 W
RDS(on) Maximum @ VGS=10V, ID=50A β€” 2.04 mΞ©
RDS(on) Typical β€” 2.0 mΞ©
Gate-Source Voltage VGS (max) β€” Β±20 V
Gate Threshold Voltage VGS(th) Typical β€” 2.0 V
Qualification β€” Automotive grade
Packaging β€” Tape & Reel (TMA1)
RoHS Status β€” Compliant

Datasheets & Resources

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