IAUCN04S7N006ATMA1 vs IAUCN04S7L006ATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N006ATMA1 by Infineon and IAUCN04S7L006ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N006ATMA1

IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon

IAUCN04S7N006ATMA1 βœ“ Active
Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΞ© 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΞ© 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N006ATMA1 IAUCN04S7L006ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $1.38
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) 175 A β€”
On-State Resistance (RDS(on)) 0.63 mOhm (typ at VGS = 10 V) β€”
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] β€”
Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
Technology OptiMOS 5 (trench) OptiMOS-7 trench
Package PG-TDSON-8-43 PG-TDSON-8-43
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +175 C -55 Β°C to +175 Β°C
Junction Temperature Max 175 C β€”
Power Dissipation Max (Pd) [DATA_NEEDED: Pd max] β€”
Gate Charge Total (Qg) [DATA_NEEDED: Qg total] β€”
Automotive Qualification AEC-Q101 β€”
Lead-Free / RoHS Yes (compliant) β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
Drain-Source Voltage (V_DS) β€” 40 V
Continuous Drain Current (I_D) β€” 175 A
R_DS(on) Max β€” 0.6 mΞ© at V_GS = 10 V
Gate Threshold Voltage (V_GS(th)) β€” [DATA_NEEDED: V_GS(th) typical value]
Gate Charge (Q_g) β€” [DATA_NEEDED: total gate charge]
Automotive Qualified β€” Yes (AEC-Q101)
RoHS Status β€” Compliant
Pin Count β€” 8
Packaging β€” Tape and Reel (ATMA1)
Polarity β€” Single N-Channel

Datasheets & Resources

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