IAUCN04S7N009ATMA1 vs IAUC60N04S6N044ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N009ATMA1 by Infineon and IAUC60N04S6N044ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N009ATMA1
IAUCN04S7N009ATMA1 - 40V 0.96mΞ© 175A OptiMOS 7 | Infineon
IAUCN04S7N009ATMA1 β ActiveInfineon
IAUC60N04S6N044ATMA1
IAUC60N04S6N044ATMA1 - 40V 4.4mΞ© 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N009ATMA1 | IAUC60N04S6N044ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $0.98 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 7 | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | OptiMOS-6 N-channel trench MOSFET |
| Drain-to-Source Voltage (V_DSS) | 40 V | β |
| Continuous Drain Current (I_D) | 175 A | β |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΞ© | β |
| Gate Drive Voltage (V_GS) | 10 V | β |
| Package | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +175C | β |
| Qualification | AEC-Q101 (Automotive) | β |
| MSL Level | 1 | 1 (unlimited) |
| RoHS Status | Compliant | Compliant |
| Configuration | Single N-Channel | β |
| Supplier Device Package | PG-TDSON-8-34 | β |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Gate-Source Voltage (V_GS) | β | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at Tc=25Β°C | β | 60 A |
| Continuous Drain Current (I_D) at Tc=100Β°C | β | [DATA_NEEDED: pulsed/current derated value] |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | β | 4.4 mΞ© |
| On-Resistance R_DS(on) max @ V_GS=4.5V | β | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: typical gate charge] |
| Power Dissipation (P_D) at Tc=25Β°C | β | 42 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Automotive Qualification | β | AEC-Q101 qualified (IAUC prefix) |
| Lead-Free / Halogen-Free | β | Yes / [DATA_NEEDED: halogen-free status] |