IAUCN04S7N009ATMA1 vs IAUCN04S7L006ATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N009ATMA1 by Infineon and IAUCN04S7L006ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N009ATMA1

IAUCN04S7N009ATMA1 - 40V 0.96mΞ© 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 βœ“ Active
Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΞ© 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΞ© 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N009ATMA1 IAUCN04S7L006ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $1.38
Manufacturer Infineon Technologies β€”
Series OptiMOS 7 β€”
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS-7 trench
Drain-to-Source Voltage (V_DSS) 40 V β€”
Continuous Drain Current (I_D) 175 A 175 A
R_DS(on) Max @ V_GS = 10 V 0.96 mΞ© β€”
Gate Drive Voltage (V_GS) 10 V β€”
Package PG-TDSON-8-34 (Surface Mount) PG-TDSON-8-43
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +175C β€”
Qualification AEC-Q101 (Automotive) β€”
MSL Level 1 β€”
RoHS Status Compliant Compliant
Configuration Single N-Channel β€”
Supplier Device Package PG-TDSON-8-34 β€”
Drain-Source Voltage (V_DS) β€” 40 V
R_DS(on) Max β€” 0.6 mΞ© at V_GS = 10 V
Gate Threshold Voltage (V_GS(th)) β€” [DATA_NEEDED: V_GS(th) typical value]
Gate Charge (Q_g) β€” [DATA_NEEDED: total gate charge]
Operating Temperature Range β€” -55 Β°C to +175 Β°C
Automotive Qualified β€” Yes (AEC-Q101)
Pin Count β€” 8
Packaging β€” Tape and Reel (ATMA1)
Polarity β€” Single N-Channel

Datasheets & Resources

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