IAUCN04S7N009ATMA1 vs IAUCN04S7N006ATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N009ATMA1 by Infineon and IAUCN04S7N006ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N009ATMA1

IAUCN04S7N009ATMA1 - 40V 0.96mΞ© 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 βœ“ Active
Infineon
IAUCN04S7N006ATMA1

IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon

IAUCN04S7N006ATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N009ATMA1 IAUCN04S7N006ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $0.95
Manufacturer Infineon Technologies β€”
Series OptiMOS 7 β€”
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) OptiMOS 5 (trench)
Drain-to-Source Voltage (V_DSS) 40 V β€”
Continuous Drain Current (I_D) 175 A β€”
R_DS(on) Max @ V_GS = 10 V 0.96 mΞ© β€”
Gate Drive Voltage (V_GS) 10 V β€”
Package PG-TDSON-8-34 (Surface Mount) PG-TDSON-8-43
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +175C β€”
Qualification AEC-Q101 (Automotive) β€”
MSL Level 1 [DATA_NEEDED: MSL rating]
RoHS Status Compliant β€”
Configuration Single N-Channel β€”
Supplier Device Package PG-TDSON-8-34 β€”
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) β€” 175 A
On-State Resistance (RDS(on)) β€” 0.63 mOhm (typ at VGS = 10 V)
Gate-Source Voltage (VGS) Max β€” [DATA_NEEDED: VGS max rating]
Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Operating Temperature Range β€” -55 C to +175 C
Junction Temperature Max β€” 175 C
Power Dissipation Max (Pd) β€” [DATA_NEEDED: Pd max]
Gate Charge Total (Qg) β€” [DATA_NEEDED: Qg total]
Automotive Qualification β€” AEC-Q101
Lead-Free / RoHS β€” Yes (compliant)

Datasheets & Resources

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