IAUCN04S7N009ATMA1 vs IAUCN10S7N021ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N009ATMA1 by Infineon and IAUCN10S7N021ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N009ATMA1
IAUCN04S7N009ATMA1 - 40V 0.96mΞ© 175A OptiMOS 7 | Infineon
IAUCN04S7N009ATMA1 β ActiveInfineon
IAUCN10S7N021ATMA1
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N009ATMA1 | IAUCN10S7N021ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $2.05 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 7 | β |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOSβ’ 7 (trench MOSFET) |
| Drain-to-Source Voltage (V_DSS) | 40 V | β |
| Continuous Drain Current (I_D) | 175 A | β |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΞ© | β |
| Gate Drive Voltage (V_GS) | 10 V | β |
| Package | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +175C | β |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| MSL Level | 1 | β |
| RoHS Status | Compliant | Compliant |
| Configuration | Single N-Channel | β |
| Supplier Device Package | PG-TDSON-8-34 | β |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at Tc | β | 175 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| RDS(on) max @ VGS=10 V | β | 2.1 mΞ© |
| Gate-Source Threshold (VGS(th)) typ | β | 3.2 V |
| Total Gate Charge (Qg) @ VGS=10 V | β | 105 nC |
| Input Capacitance (Ciss) | β | 2.98 nF |
| Output Capacitance (Coss) | β | 32 pF |
| Reverse Transfer Capacitance (Crss) | β | 7.153 nF |
| Power Dissipation (Pd) @ Tc | β | 217 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |