IAUCN04S7N009ATMA1 vs IAUZN04S7L030ATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N009ATMA1 by Infineon and IAUZN04S7L030ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N009ATMA1

IAUCN04S7N009ATMA1 - 40V 0.96mΞ© 175A OptiMOS 7 | Infineon

IAUCN04S7N009ATMA1 βœ“ Active
Infineon
IAUZN04S7L030ATMA1 IAUZN04S7L030ATMA1 - 40V 3.05mΞ© OptiMOS 7 N-MOSFET | Infineon

IAUZN04S7L030ATMA1 - 40V 3.05mΞ© OptiMOS 7 N-MOSFET | Infineon

IAUZN04S7L030ATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N009ATMA1 IAUZN04S7L030ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $0.36
Manufacturer Infineon Technologies β€”
Series OptiMOS 7 β€”
FET Type N-Channel β€”
Technology MOSFET (Metal Oxide) β€”
Drain-to-Source Voltage (V_DSS) 40 V β€”
Continuous Drain Current (I_D) 175 A β€”
R_DS(on) Max @ V_GS = 10 V 0.96 mΞ© β€”
Gate Drive Voltage (V_GS) 10 V β€”
Package PG-TDSON-8-34 (Surface Mount) PG-TSDSON-8-44 (S3O8) 3x3 mmΒ²
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +175C β€”
Qualification AEC-Q101 (Automotive) β€”
MSL Level 1 [DATA_NEEDED: MSL rating]
RoHS Status Compliant β€”
Configuration Single N-Channel β€”
Supplier Device Package PG-TDSON-8-34 β€”
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID, Tc=25Β°C) β€” 60 A
Pulsed Drain Current (IDM, Tj) β€” 100 A
On-State Resistance (RDS(on), VGS=10V max) β€” 3.05 mΞ©
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Power Dissipation (PD, Tc=25Β°C) β€” 58 W
Operating Junction Temperature (Tj) β€” -55C to +175C
Technology Family β€” OptiMOS-7
Channel Type β€” N-Channel
Automotive Qualification β€” AEC-Q101 (Automotive OptiMOS)
RoHS Compliance β€” Compliant

Datasheets & Resources

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