IAUCN04S7N019GATMA1 vs IAUA180N04S5N012AUMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N019GATMA1 by Infineon and IAUA180N04S5N012AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N019GATMA1

IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon

IAUCN04S7N019GATMA1 βœ“ Active
Infineon
IAUA180N04S5N012AUMA1

IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N019GATMA1 IAUA180N04S5N012AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $1.96
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tj) 147 A β€”
On-Resistance RDS(on) typical 1.95 mOhm β€”
Maximum Power Dissipation (Tc) 81 W β€”
Package PG-THSOG-4-1 (SSO4G 5x6 mm) PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mmΒ²
Mounting Type Surface Mount Surface Mount
Substrate Compatibility IMS substrates and legacy PCB β€”
Automotive Qualification AEC-Q101 (per family datasheet) AEC-Q101
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Tape and Reel Packaging Yes (per ATMA1 suffix) β€”
Operating Temperature Range [DATA_NEEDED: junction temperature range from datasheet] -55 Β°C to +175 Β°C (Tj)
Part Number β€” IAUA180N04S5N012AUMA1
Series β€” OptiMOS-5 40 V
FET Type β€” N-Channel
Continuous Drain Current (ID) β€” 180 A (Tc)
Maximum Power Dissipation (PD) β€” 125 W (Tc)
R_DS(on) (max) β€” 1.2 mΞ© at 10 V VGS
Gate-Source Voltage (VGS) max β€” Β±20 V
Technology β€” OptiMOS-5 Trench

Datasheets & Resources

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