IAUCN04S7N019GATMA1 vs IAUCN04S6N013TATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N019GATMA1 by Infineon and IAUCN04S6N013TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N019GATMA1
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 β ActiveInfineon
IAUCN04S6N013TATMA1
IAUCN04S6N013TATMA1 - 40V N-Channel Automotive MOSFET | Infineon
IAUCN04S6N013TATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N019GATMA1 | IAUCN04S6N013TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $1.66 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, Tj) | 147 A | β |
| On-Resistance RDS(on) typical | 1.95 mOhm | β |
| Maximum Power Dissipation (Tc) | 81 W | β |
| Package | PG-THSOG-4-1 (SSO4G 5x6 mm) | PG-LHDSO-10-1 (SSO10T) |
| Mounting Type | Surface Mount | Surface Mount |
| Substrate Compatibility | IMS substrates and legacy PCB | β |
| Automotive Qualification | AEC-Q101 (per family datasheet) | AEC-Q101 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Tape and Reel Packaging | Yes (per ATMA1 suffix) | β |
| Operating Temperature Range | [DATA_NEEDED: junction temperature range from datasheet] | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 40 V |
| Continuous Drain Current (I<sub>D</sub>) | β | 230 A at T<sub>C</sub> |
| R<sub>DS(on)</sub> (max) | β | 1.32 mΞ© at V<sub>GS</sub> = 10 V |
| Power Dissipation (P<sub>D</sub>) | β | 133 W at T<sub>C</sub> |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | β | 2.6 V (typ) |
| Total Gate Charge (Q<sub>g</sub>) | β | 52 nC at V<sub>GS</sub> = 10 V |
| Input Capacitance (C<sub>iss</sub>) | β | 1.08 nF |
| Output Capacitance (C<sub>oss</sub>) | β | 3.7 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | β | 51 pF |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |