IAUCN04S7N019GATMA1 vs IAUCN04S7L005ATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N019GATMA1 by Infineon and IAUCN04S7L005ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N019GATMA1

IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon

IAUCN04S7N019GATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N019GATMA1 IAUCN04S7L005ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $0.85
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 7 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID, Tj) 147 A β€”
On-Resistance RDS(on) typical 1.95 mOhm β€”
Maximum Power Dissipation (Tc) 81 W β€”
Package PG-THSOG-4-1 (SSO4G 5x6 mm) PG-TDSON-8-43 (TDSON-8)
Mounting Type Surface Mount Surface Mount
Substrate Compatibility IMS substrates and legacy PCB β€”
Automotive Qualification AEC-Q101 (per family datasheet) AEC-Q101 qualified
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Tape and Reel Packaging Yes (per ATMA1 suffix) β€”
Operating Temperature Range [DATA_NEEDED: junction temperature range from datasheet] -55Β°C to +175Β°C (Tj)
Technology β€” OptiMOS 7 (trench N-channel MOSFET)
Drain-Source Voltage (V_DS) β€” 40 V
Continuous Drain Current (I_D, T_C=25Β°C) β€” 430 A (Tj)
Continuous Drain Current (I_D, T_C=100Β°C) β€” [DATA_NEEDED: I_D at T_C=100Β°C]
On-Resistance R_DS(on) max β€” 0.52 mΞ©
Power Dissipation (P_D) β€” 179 W (T_C)
Gate Threshold Voltage (V_GS(th)) β€” [DATA_NEEDED: V_GS(th) typical and min/max]
Total Gate Charge (Q_g) β€” [DATA_NEEDED: total Q_g in nC]
Pin Count β€” 8
MSL Level β€” [DATA_NEEDED: MSL rating]

Datasheets & Resources

Browse All Products Create BOM Request Quote