IAUCN04S7N019GATMA1 vs IAUCN04S7L050HATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N019GATMA1 by Infineon and IAUCN04S7L050HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N019GATMA1
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 β ActiveInfineon
IAUCN04S7L050HATMA1
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΞ© | Infineon
IAUCN04S7L050HATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N019GATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tj) | 147 A | β |
| On-Resistance RDS(on) typical | 1.95 mOhm | β |
| Maximum Power Dissipation (Tc) | 81 W | β |
| Package | PG-THSOG-4-1 (SSO4G 5x6 mm) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Mounting Type | Surface Mount | Surface Mount |
| Substrate Compatibility | IMS substrates and legacy PCB | β |
| Automotive Qualification | AEC-Q101 (per family datasheet) | AEC-Q101 (family-level, automotive grade) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Tape and Reel Packaging | Yes (per ATMA1 suffix) | β |
| Operating Temperature Range | [DATA_NEEDED: junction temperature range from datasheet] | β |
| Series | β | OptiMOSβ’ 7 |
| Configuration | β | Dual N-Channel (Dual Drain, Half-Bridge) |
| Continuous Drain Current (ID), Tc=25Β°C | β | 65 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 5.04 mΞ© |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25Β°C | β | 40 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Technology | β | Trench MOSFET, OptiMOSβ’ 7 40V |