IAUCN04S7N027GATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N027GATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N027GATMA1
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
IAUCN04S7N027GATMA1 β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N027GATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.72 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (Vds max) | 40 V | β |
| Continuous Drain Current (Id) | 117 A | β |
| On-Resistance (Rds(on) max) | 2.67 mOhm | β |
| Power Dissipation (Pd) | 70 W (Tc) | β |
| Package / Case | PG-THSOG-4-1 (SSO4G 5x6) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | Automotive | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | β |
| Gate-Source Voltage Max (Vgs) | [DATA_NEEDED: Vgs max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL] | 1 (per JEDEC J-STD-020) |
| Substrate Compatibility | IMS substrates and legacy FR-4 | β |
| Part Series | β | OptiMOS 6 |
| Configuration | β | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package | β | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Automotive Qualification | β | AEC-Q101 (per part number suffix) |