IAUCN04S7N027GATMA1 vs IAUCN04S7L042GATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N027GATMA1 by Infineon and IAUCN04S7L042GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N027GATMA1 IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6

IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6

IAUCN04S7N027GATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N027GATMA1 IAUCN04S7L042GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.72 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 OptiMOS 7 40V
Channel Type N-Channel β€”
Drain-Source Voltage (Vds max) 40 V β€”
Continuous Drain Current (Id) 117 A β€”
On-Resistance (Rds(on) max) 2.67 mOhm β€”
Power Dissipation (Pd) 70 W (Tc) β€”
Package / Case PG-THSOG-4-1 (SSO4G 5x6) β€”
Mounting Type Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
Qualification Automotive β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] -55C to +175C (Tj)
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] β€”
Gate-Source Voltage Max (Vgs) [DATA_NEEDED: Vgs max] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg] β€”
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL] 1
Substrate Compatibility IMS substrates and legacy FR-4 β€”
Technology β€” Trench N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID, Tj) β€” 77 A
Maximum Power Dissipation (PD, Tc) β€” 50 W
Package β€” PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Polarity / Channel Type β€” N-Channel enhancement mode
Automotive Qualified β€” Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Packing β€” Tape & Reel (per -ATMA1 suffix)
Target Substrate β€” IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) β€” [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg β€” [DATA_NEEDED: Qg @ VGS=10V]

Datasheets & Resources

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