IAUCN04S7N027GATMA1 vs IAUCN04S7L050HATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N027GATMA1 by Infineon and IAUCN04S7L050HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
IAUCN04S7N027GATMA1 β ActiveInfineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΞ© | Infineon
IAUCN04S7L050HATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N027GATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.72 | $0.83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | β |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (Vds max) | 40 V | β |
| Continuous Drain Current (Id) | 117 A | β |
| On-Resistance (Rds(on) max) | 2.67 mOhm | β |
| Power Dissipation (Pd) | 70 W (Tc) | β |
| Package / Case | PG-THSOG-4-1 (SSO4G 5x6) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | Automotive | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | β |
| Gate-Source Voltage Max (Vgs) | [DATA_NEEDED: Vgs max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: total gate charge] |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL] | 1 (per JEDEC J-STD-020) |
| Substrate Compatibility | IMS substrates and legacy FR-4 | β |
| Series | β | OptiMOSβ’ 7 |
| Configuration | β | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID), Tc=25Β°C | β | 65 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 5.04 mΞ© |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) @ Tc=25Β°C | β | 40 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Package | β | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Automotive Qualification | β | AEC-Q101 (family-level, automotive grade) |
| Technology | β | Trench MOSFET, OptiMOSβ’ 7 40V |