IAUCN04S7N037GATMA1 vs IAUA180N04S5N012AUMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N037GATMA1 by Infineon and IAUA180N04S5N012AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 β ActiveInfineon
IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon
IAUA180N04S5N012AUMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N037GATMA1 | IAUA180N04S5N012AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $1.96 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS-5 40 V |
| Technology | Trench MOSFET, N-Channel | OptiMOS-5 Trench |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tj | 91 A | β |
| On-State Resistance RDS(on) typical | 3.65 mΞ© at VGS = 10 V | β |
| Power Dissipation (PD) at Tc | 57 W | β |
| Package | SSO4G 5x6 mmΒ² (PG-THSOG-4-1) | PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mmΒ² |
| Mounting Type | Surface Mount (IMS substrate attach compatible) | Surface Mount |
| Channel Type | N-Channel | β |
| Operating Mode | Enhancement | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Operating Temperature Range | [DATA_NEEDED: junction/ambient temperature limits] | -55 Β°C to +175 Β°C (Tj) |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Part Number | β | IAUA180N04S5N012AUMA1 |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) | β | 180 A (Tc) |
| Maximum Power Dissipation (PD) | β | 125 W (Tc) |
| R_DS(on) (max) | β | 1.2 mΞ© at 10 V VGS |
| Gate-Source Voltage (VGS) max | β | Β±20 V |