IAUCN04S7N037GATMA1 vs IAUC41N06S5N102ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N037GATMA1 by Infineon and IAUC41N06S5N102ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 β ActiveInfineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΞ© OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N037GATMA1 | IAUC41N06S5N102ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $0.58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | β |
| Technology | Trench MOSFET, N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at Tj | 91 A | β |
| On-State Resistance RDS(on) typical | 3.65 mΞ© at VGS = 10 V | β |
| Power Dissipation (PD) at Tc | 57 W | β |
| Package | SSO4G 5x6 mmΒ² (PG-THSOG-4-1) | PG-TDSON-8-33 (SSO8) Surface Mount |
| Mounting Type | Surface Mount (IMS substrate attach compatible) | Surface Mount |
| Channel Type | N-Channel | β |
| Operating Mode | Enhancement | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per Infineon automotive MOSFET family) |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Operating Temperature Range | [DATA_NEEDED: junction/ambient temperature limits] | -55C to +175C (junction) |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Part Family | β | OptiMOS 5 Power-Transistor |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | β | 47 A (Tj) |
| Power Dissipation (PD, Tc=25C) | β | 42 W |
| On-Resistance (RDS(on)) | β | 10.2 mΞ© at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | β | 3.4 V (typical) |
| Total Gate Charge (QG) | β | 12.5 nC |
| Channel Polarity | β | N-Channel (single) |