IAUCN04S7N037GATMA1 vs IAUCN04S6N013TATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N037GATMA1 by Infineon and IAUCN04S6N013TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 β ActiveInfineon
IAUCN04S6N013TATMA1 - 40V N-Channel Automotive MOSFET | Infineon
IAUCN04S6N013TATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N037GATMA1 | IAUCN04S6N013TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $1.66 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 7 | β |
| Technology | Trench MOSFET, N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at Tj | 91 A | β |
| On-State Resistance RDS(on) typical | 3.65 mΞ© at VGS = 10 V | β |
| Power Dissipation (PD) at Tc | 57 W | β |
| Package | SSO4G 5x6 mmΒ² (PG-THSOG-4-1) | PG-LHDSO-10-1 (SSO10T) |
| Mounting Type | Surface Mount (IMS substrate attach compatible) | Surface Mount |
| Channel Type | N-Channel | β |
| Operating Mode | Enhancement | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| Operating Temperature Range | [DATA_NEEDED: junction/ambient temperature limits] | β |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 40 V |
| Continuous Drain Current (I<sub>D</sub>) | β | 230 A at T<sub>C</sub> |
| R<sub>DS(on)</sub> (max) | β | 1.32 mΞ© at V<sub>GS</sub> = 10 V |
| Power Dissipation (P<sub>D</sub>) | β | 133 W at T<sub>C</sub> |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | β | 2.6 V (typ) |
| Total Gate Charge (Q<sub>g</sub>) | β | 52 nC at V<sub>GS</sub> = 10 V |
| Input Capacitance (C<sub>iss</sub>) | β | 1.08 nF |
| Output Capacitance (C<sub>oss</sub>) | β | 3.7 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | β | 51 pF |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |