IAUCN04S7N037GATMA1 vs IAUCN04S7L028ATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N037GATMA1 by Infineon and IAUCN04S7L028ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N037GATMA1 IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 βœ“ Active
Infineon
IAUCN04S7L028ATMA1 IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L028ATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N037GATMA1 IAUCN04S7L028ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.89 $0.88
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 OptiMOS 7
Technology Trench MOSFET, N-Channel β€”
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Tj 91 A β€”
On-State Resistance RDS(on) typical 3.65 mΞ© at VGS = 10 V β€”
Power Dissipation (PD) at Tc 57 W β€”
Package SSO4G 5x6 mmΒ² (PG-THSOG-4-1) PG-TDSON-8-33 (TDSON-8 EP)
Mounting Type Surface Mount (IMS substrate attach compatible) Surface Mount
Channel Type N-Channel β€”
Operating Mode Enhancement β€”
Automotive Qualification AEC-Q101 AEC-Q101
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] β€”
Operating Temperature Range [DATA_NEEDED: junction/ambient temperature limits] β€”
Gate Charge (Qg) typical [DATA_NEEDED: total gate charge] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] 1.578 nF
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) β€” 100 A
On-State Resistance (RDS(on)) max β€” 2.80 mOhm at VGS=10 V
On-State Resistance (RDS(on)) β€” 2.82 mOhm at VGS=10 V (JLCPCB reported)
Gate-Source Threshold (VGS(th)) β€” 1.8 V (typ)
Gate Charge (Qg) β€” 24 nC at VGS=10 V
Output Capacitance (Coss) β€” 788 pF
Reverse Transfer Capacitance (Crss) β€” 36 pF
Power Dissipation (Ptot) β€” 58 W
Operating Junction Temperature β€” -55 C to +175 C

Datasheets & Resources

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