IAUCN04S7N037GATMA1 vs IAUCN04S7L042GATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N037GATMA1 by Infineon and IAUCN04S7L042GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N037GATMA1 IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N037GATMA1 IAUCN04S7L042GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.89 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 β€”
Technology Trench MOSFET, N-Channel Trench N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Tj 91 A β€”
On-State Resistance RDS(on) typical 3.65 mΞ© at VGS = 10 V β€”
Power Dissipation (PD) at Tc 57 W β€”
Package SSO4G 5x6 mmΒ² (PG-THSOG-4-1) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Mounting Type Surface Mount (IMS substrate attach compatible) Surface Mount (IMS substrate / FR4 with thermal vias)
Channel Type N-Channel β€”
Operating Mode Enhancement β€”
Automotive Qualification AEC-Q101 β€”
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] 1
Operating Temperature Range [DATA_NEEDED: junction/ambient temperature limits] -55C to +175C (Tj)
Gate Charge (Qg) typical [DATA_NEEDED: total gate charge] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] β€”
Product Family β€” OptiMOS 7 40V
Continuous Drain Current (ID, Tj) β€” 77 A
Maximum Power Dissipation (PD, Tc) β€” 50 W
Polarity / Channel Type β€” N-Channel enhancement mode
Automotive Qualified β€” Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Packing β€” Tape & Reel (per -ATMA1 suffix)
Target Substrate β€” IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) β€” [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg β€” [DATA_NEEDED: Qg @ VGS=10V]

Datasheets & Resources

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