IAUCN04S7N037GATMA1 vs IAUCN04S7N006TATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N037GATMA1 by Infineon and IAUCN04S7N006TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 β ActiveInfineon
IAUCN04S7N006TATMA1 - 40V 425A OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7N006TATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N037GATMA1 | IAUCN04S7N006TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $2.66 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 7 | β |
| Technology | Trench MOSFET, N-Channel | OptiMOS 7 (shielded-gate trench) |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at Tj | 91 A | β |
| On-State Resistance RDS(on) typical | 3.65 mΞ© at VGS = 10 V | β |
| Power Dissipation (PD) at Tc | 57 W | β |
| Package | SSO4G 5x6 mmΒ² (PG-THSOG-4-1) | PG-LHDSO-10-3 (10-LSOP, 5.30 mm width, exposed pad) |
| Mounting Type | Surface Mount (IMS substrate attach compatible) | Surface Mount |
| Channel Type | N-Channel | β |
| Operating Mode | Enhancement | β |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Operating Temperature Range | [DATA_NEEDED: junction/ambient temperature limits] | [DATA_NEEDED: Tj min/max] |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D, T_j) | β | 425 A |
| Power Dissipation (P_D, T_C) | β | 205 W |
| R_DS(on) (typ, V_GS=10V) | β | 0.63 mΞ© |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Total Gate Charge (Q_G) | β | [DATA_NEEDED: Q_G at V_GS=10V] |
| Automotive Grade | β | Yes (Infineon automotive MOSFET line) |
| Lead-Free | β | Yes |