IAUCN08S7L033ATMA1 vs IAUC100N10S5L054ATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L033ATMA1 by Infineon and IAUC100N10S5L054ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 ✓ ActiveInfineon
IAUC100N10S5L054ATMA1
IAUC100N10S5L054ATMA1 - 100V 5.4mΩ N-Ch MOSFET | Infineon
IAUC100N10S5L054ATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUCN08S7L033ATMA1 | IAUC100N10S5L054ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $1.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 | OptiMOS 5 (IAUC automotive family) |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | — |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΩ | — |
| Continuous Drain Current (ID) at Tj | 130 A | — |
| Continuous Drain Current (ID) at Tc=25°C | [DATA_NEEDED: ID at Tc=25C] | — |
| Power Dissipation (PD) at Tc=25°C | 118 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate-Source Voltage (VGS) max | ±20 V (typical Infineon OptiMOS 7 limit) | — |
| Operating Temperature Range | -55°C to +175°C (TJ) | -55°C to +175°C |
| Package | PG-TDSON-8-34 (SSO8, 5x6 mm²) | PG-TDSON-8-34 (surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | AEC-Q101 (automotive) |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS 5 trench |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020, typical for this package) | [DATA_NEEDED: MSL rating] |
| Drain-to-Source Voltage (V_DS) | — | 100 V |
| Gate-to-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS value] |
| Continuous Drain Current (I_D, Tj) | — | 101 A |
| Power Dissipation (P_D, Tc) | — | 130 W |
| R_DS(on) max at V_GS=10V | — | 5.4 mΩ |