IAUCN08S7L033ATMA1 vs IAUC120N06S5N011ATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L033ATMA1 by Infineon and IAUC120N06S5N011ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β ActiveInfineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΞ© OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7L033ATMA1 | IAUC120N06S5N011ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΞ© | β |
| Continuous Drain Current (ID) at Tj | 130 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | [DATA_NEEDED: ID at Tc=25C] | β |
| Power Dissipation (PD) at Tc=25Β°C | 118 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Gate-Source Voltage (VGS) max | Β±20 V (typical Infineon OptiMOS 7 limit) | β |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ) | -55Β°C to +175Β°C (Tj) |
| Package | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) | PG-TDSON-8-53 (SSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | β |
| Technology | OptiMOS 7 trench MOSFET | β |
| RoHS Status | Compliant | β |
| MSL Level | 1 (per JEDEC J-STD-020, typical for this package) | 1 (per JEDEC J-STD-020) |
| Product Family | β | OptiMOS-5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (Vdss) | β | 60 V |
| Continuous Drain Current (Id) | β | 120 A (Tc=25Β°C, Vgs=10V) |
| Pulsed Drain Current (Idm) | β | 310 A (Tj) |
| On-Resistance Rds(on) max | β | 1.1 mΞ© at Vgs=10 V |
| Gate-Source Voltage (Vgs) max | β | Β±20 V |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total value] |
| Power Dissipation (Pd) | β | 188 W (Tc=25Β°C) |
| Automotive Qualification | β | AEC-Q101 qualified |
| RoHS Compliance | β | Compliant |