IAUCN08S7L033ATMA1 vs IAUCN08S7L013ATMA1 Comparison

Detailed side-by-side comparison of IAUCN08S7L033ATMA1 by Infineon and IAUCN08S7L013ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN08S7L033ATMA1 IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 ✓ Active

Specification Comparison

Parameter IAUCN08S7L033ATMA1 IAUCN08S7L013ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.86 $1.96
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 80 V 80 V
Maximum On-Resistance (RDS(on)) at VGS=10V 3.3 mΩ
Continuous Drain Current (ID) at Tj 130 A
Continuous Drain Current (ID) at Tc=25°C [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C 118 W
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: gate threshold voltage range]
Gate-Source Voltage (VGS) max ±20 V (typical Infineon OptiMOS 7 limit)
Operating Temperature Range -55°C to +175°C (TJ) -55 °C to +175 °C
Package PG-TDSON-8-34 (SSO8, 5x6 mm²) PG-TDSON-8-53 (TDSON-8 FL)
Mounting Type Surface Mount Surface Mount
Qualification Automotive Grade (per Infineon datasheet header) AEC-Q101 (automotive)
Technology OptiMOS 7 trench MOSFET
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020, typical for this package) [DATA_NEEDED: MSL rating]
Product Family OptiMOS 7
Channel Type N-Channel
Maximum On-Resistance (RDS(on) max) 1.26 mΩ
Continuous Drain Current (TC = 25 °C) [DATA_NEEDED: continuous drain current at TC=25C]
Continuous Drain Current (TJ) 293 A
Power Dissipation (TC) 219 W
Gate Drive Voltage (typical) 10 V
Packaging Tape & Reel (suffix ATMA1)

Datasheets & Resources

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