IAUCN08S7N024ATMA1 vs IAUCN08S7N034ATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7N024ATMA1 by Infineon and IAUCN08S7N034ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7N024ATMA1
IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN08S7N024ATMA1 β ActiveInfineon
IAUCN08S7N034ATMA1
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΞ© Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7N024ATMA1 | IAUCN08S7N034ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $1.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 (80 V) | OptiMOSβ’ 7 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at TC=25C | 165 A | β |
| Drain-Source On-Resistance (RDS(on)) max | 2.4 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Technology | OptiMOS 7 trench | β |
| Package | PG-TDSON-8-34 (8-pin, exposed pad) | PG-TDSON-8-34 (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (typical automotive) | β |
| Power Dissipation (Ptot) | [DATA_NEEDED: Ptot @ TC=25C] | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Compliance | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL 1 (unlimited floor life) |
| Typical Application | 48 V automotive DC-DC, motor drive, load switch | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | β | 120 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | β | 3.4 mΞ© |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | β | 3.2 V (typ) |
| Total Gate Charge (Q<sub>G</sub>) | β | 45.8 nC @ V<sub>GS</sub>=10 V |
| Input Capacitance (C<sub>iss</sub>) | β | 1.27 nF |
| Output Capacitance (C<sub>oss</sub>) | β | 3.115 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | β | 23 pF |
| Power Dissipation (P<sub>D</sub>) | β | 118 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| RoHS Status | β | Compliant |