IAUCN08S7N024TATMA1 vs IAUCN08S7L033ATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7N024TATMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7N024TATMA1
IAUCN08S7N024TATMA1 - 80V 2.44mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N024TATMA1 β ActiveInfineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7N024TATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.45 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | Automotive OptiMOS 7 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide Semiconductor) | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (Vds) | 80 V | β |
| Continuous Drain Current (Id) at Tj | 165 A | β |
| Power Dissipation (Pd) at Tc | 157 W | β |
| Rds(on) Max at Vgs=10V | 2.44 mOhm | β |
| Package / Case | PG-LHDSO-10-1 (SSO10T, 5x7 mmΒ²) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Cooling | Top-side cooled | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55Β°C to +175Β°C (TJ) |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | Compliant |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ] | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | β | 3.3 mΞ© |
| Continuous Drain Current (ID) at Tj | β | 130 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25Β°C | β | 118 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | β | Β±20 V (typical Infineon OptiMOS 7 limit) |
| Package | β | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) |
| Qualification | β | Automotive Grade (per Infineon datasheet header) |
| MSL Level | β | 1 (per JEDEC J-STD-020, typical for this package) |