IAUCN08S7N024TATMA1 vs IAUCN10S7L290TATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7N024TATMA1 by Infineon and IAUCN10S7L290TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7N024TATMA1
IAUCN08S7N024TATMA1 - 80V 2.44mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N024TATMA1 β ActiveInfineon
IAUCN10S7L290TATMA1
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7N024TATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.45 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide Semiconductor) | β |
| Drain-Source Voltage (Vds) | 80 V | β |
| Continuous Drain Current (Id) at Tj | 165 A | β |
| Power Dissipation (Pd) at Tc | 157 W | β |
| Rds(on) Max at Vgs=10V | 2.44 mOhm | β |
| Package / Case | PG-LHDSO-10-1 (SSO10T, 5x7 mmΒ²) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Cooling | Top-side cooled | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Automotive Qualification | AEC-Q101 | AEC-Q100 qualified |
| RoHS Status | Compliant | β |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: Qg typical] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ] | β |
| Product Family | β | OptiMOSβ’ 7 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25Β°C | β | 27 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | β | 28.6 mΞ© |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Power Dissipation (PD) at TC=25Β°C | β | 45 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Package | β | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | β | Compliant |
| Lead-Free | β | Yes |
| Avalanche Rated | β | Yes |
| ESD Protection | β | HBM Class 1C (per Infineon datasheet) |