IAUCN08S7N034ATMA1 vs IAUC50N08S5L096ATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7N034ATMA1 by Infineon and IAUC50N08S5L096ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7N034ATMA1
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΞ© Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 β ActiveInfineon
IAUC50N08S5L096ATMA1
IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΞ© OptiMOS 5 | Infineon
IAUC50N08S5L096ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7N034ATMA1 | IAUC50N08S5L096ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.48 | $0.98 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 120 A | β |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 3.4 mΞ© | β |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | 3.2 V (typ) | β |
| Total Gate Charge (Q<sub>G</sub>) | 45.8 nC @ V<sub>GS</sub>=10 V | β |
| Input Capacitance (C<sub>iss</sub>) | 1.27 nF | β |
| Output Capacitance (C<sub>oss</sub>) | 3.115 nF | β |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | 23 pF | β |
| Power Dissipation (P<sub>D</sub>) | 118 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TDSON-8-34 (TDSON EP) | PG-TDSON-8-33 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL 1 (unlimited floor life) | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Status | Compliant | Compliant |
| Product Series | β | OptiMOS 5 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) | β | 50 A (Tc) |
| Pulsed Drain Current (IDM) | β | 200 A |
| On-Resistance (RDS(on)) | β | 9.6 mΞ© max @ VGS=10V, ID=25A |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) | β | 60 W (Tc) |
| Operating Temperature Range | β | -55Β°C to +175Β°C |
| Lead-Free | β | Yes |