IAUCN08S7N034ATMA1 vs IAUC60N06S5L073ATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7N034ATMA1 by Infineon and IAUC60N06S5L073ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7N034ATMA1
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΞ© Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 β ActiveInfineon
IAUC60N06S5L073ATMA1
IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon
IAUC60N06S5L073ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7N034ATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.48 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ 7 | OptiMOS 5 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 120 A | β |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 3.4 mΞ© | β |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | 3.2 V (typ) | β |
| Total Gate Charge (Q<sub>G</sub>) | 45.8 nC @ V<sub>GS</sub>=10 V | β |
| Input Capacitance (C<sub>iss</sub>) | 1.27 nF | β |
| Output Capacitance (C<sub>oss</sub>) | 3.115 nF | β |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | 23 pF | β |
| Power Dissipation (P<sub>D</sub>) | 118 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TDSON-8-34 (TDSON EP) | PG-TDSON-8-33 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL 1 (unlimited floor life) | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tj | β | 60 A |
| On-Resistance RDS(on) max | β | 7.3 mΞ© |
| Total Gate Charge (QG) | β | 17.4 nC |
| Power Dissipation (PD) at Tc | β | 52 W |
| Operating Temperature Range | β | -55C to +175C |
| Technology | β | Trench (OptiMOS 5) |
| Number of Pins | β | 8 |
| Configuration | β | Single N-Channel |
| Qualification | β | AEC-Q101 automotive grade |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th) typical] |
| Thermal Resistance RΞΈJA | β | [DATA_NEEDED: thermal resistance junction-to-ambient] |