IAUCN08S7N034ATMA1 vs IAUCN04S7N006ATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7N034ATMA1 by Infineon and IAUCN04S7N006ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΞ© Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 β ActiveInfineon
IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon
IAUCN04S7N006ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7N034ATMA1 | IAUCN04S7N006ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.48 | $0.95 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOSβ’ 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 120 A | β |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 3.4 mΞ© | β |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | 3.2 V (typ) | β |
| Total Gate Charge (Q<sub>G</sub>) | 45.8 nC @ V<sub>GS</sub>=10 V | β |
| Input Capacitance (C<sub>iss</sub>) | 1.27 nF | β |
| Output Capacitance (C<sub>oss</sub>) | 3.115 nF | β |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | 23 pF | β |
| Power Dissipation (P<sub>D</sub>) | 118 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TDSON-8-34 (TDSON EP) | PG-TDSON-8-43 |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL 1 (unlimited floor life) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Status | Compliant | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) | β | 175 A |
| On-State Resistance (RDS(on)) | β | 0.63 mOhm (typ at VGS = 10 V) |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Technology | β | OptiMOS 5 (trench) |
| Operating Temperature Range | β | -55 C to +175 C |
| Junction Temperature Max | β | 175 C |
| Power Dissipation Max (Pd) | β | [DATA_NEEDED: Pd max] |
| Gate Charge Total (Qg) | β | [DATA_NEEDED: Qg total] |
| Lead-Free / RoHS | β | Yes (compliant) |