IAUCN08S7N034ATMA1 vs ISC016N08NM8ATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7N034ATMA1 by Infineon and ISC016N08NM8ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7N034ATMA1
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΞ© Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 β Active
Specification Comparison
| Parameter | IAUCN08S7N034ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.48 | $1.02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 120 A | β |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 3.4 mΞ© | β |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | 3.2 V (typ) | β |
| Total Gate Charge (Q<sub>G</sub>) | 45.8 nC @ V<sub>GS</sub>=10 V | β |
| Input Capacitance (C<sub>iss</sub>) | 1.27 nF | β |
| Output Capacitance (C<sub>oss</sub>) | 3.115 nF | β |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | 23 pF | β |
| Power Dissipation (P<sub>D</sub>) | 118 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TDSON-8-34 (TDSON EP) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL 1 (unlimited floor life) | 1 (per JEDEC J-STD-020E classification for SuperSO8) |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | Compliant |
| Product Series | β | OptiMOS 8 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS max) | β | 80 V |
| Gate-Source Voltage (VGS max) | β | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | β | 29 A |
| Continuous Drain Current (ID) at Tc | β | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) at Tc | β | 268 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | β | 1.6 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: total gate charge] |
| Operating Temperature Range | β | -55 C to +150 C (junction) |
| Technology | β | Trench-gate OptiMOS 8 (silicon) |
| Lead-Free / Halogen-Free | β | Lead-free (per Infineon product page) |