IAUCN10S5L110TATMA1 vs IAUCN10S7L290TATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S5L110TATMA1 by Infineon and IAUCN10S7L290TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 β ActiveInfineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN10S5L110TATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.08 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| Technology | N-Channel MOSFET, Trench, Logic Level | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tj | 61 A | β |
| On-Resistance RDS(on) max at VGS=10V | 11.3 mΞ© | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage rating] | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) at Tc | 88 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | β |
| Package | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260Β°C peak reflow) | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | 100% Avalanche Tested | Yes |
| Automotive Qualification | AEC-Q101 Extended Qualification | AEC-Q100 qualified |
| RoHS Status | Compliant | β |
| Product Family | β | OptiMOSβ’ 7 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC=25Β°C | β | 27 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | β | 28.6 mΞ© |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25Β°C | β | 45 W |
| RoHS Compliance | β | Compliant |
| Lead-Free | β | Yes |
| ESD Protection | β | HBM Class 1C (per Infineon datasheet) |