IAUCN10S5L280DATMA1 vs IAUCN08S7L013ATMA1 Comparison

Detailed side-by-side comparison of IAUCN10S5L280DATMA1 by Infineon and IAUCN08S7L013ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN10S5L280DATMA1

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 βœ“ Active
Infineon
IAUCN08S7L013ATMA1

IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon

IAUCN08S7L013ATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN10S5L280DATMA1 IAUCN08S7L013ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $1.96
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS 7
Configuration Dual N-Channel MOSFET Array β€”
Drain-Source Voltage (Vds) 100 V β€”
Continuous Drain Current (Id) at Tj 23 A β€”
Power Dissipation (Pd) at Tc 38 W β€”
Package PG-TDSON-8-61 (SSO8) PG-TDSON-8-53 (TDSON-8 FL)
Mounting Type Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) β€”
Technology OptiMOS 5 Trench MOSFET β€”
Operating Temperature Range -55C to +175C (junction) -55 Β°C to +175 Β°C
Pin Count 8 β€”
MSL Level 1 [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Packing Tape & Reel (T&R) β€”
Channel Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 80 V
Maximum On-Resistance (RDS(on) max) β€” 1.26 mΞ©
Continuous Drain Current (TC = 25 Β°C) β€” [DATA_NEEDED: continuous drain current at TC=25C]
Continuous Drain Current (TJ) β€” 293 A
Power Dissipation (TC) β€” 219 W
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage range]
Gate Drive Voltage (typical) β€” 10 V
Qualification β€” AEC-Q101 (automotive)
Packaging β€” Tape & Reel (suffix ATMA1)

Datasheets & Resources

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