IAUCN10S5L280DATMA1 vs IAUCN08S7L110ATMA1 Comparison

Detailed side-by-side comparison of IAUCN10S5L280DATMA1 by Infineon and IAUCN08S7L110ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN10S5L280DATMA1

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 βœ“ Active
Infineon
IAUCN08S7L110ATMA1

IAUCN08S7L110ATMA1 - 80V 11mΞ© N-Channel MOSFET | Infineon

IAUCN08S7L110ATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN10S5L280DATMA1 IAUCN08S7L110ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $0.46
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 5 β€”
Configuration Dual N-Channel MOSFET Array Single
Drain-Source Voltage (Vds) 100 V β€”
Continuous Drain Current (Id) at Tj 23 A β€”
Power Dissipation (Pd) at Tc 38 W β€”
Package PG-TDSON-8-61 (SSO8) PG-TDSON-8-34 (TDSON-8)
Mounting Type Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) Yes (AEC-Q101 expected per family)
Technology OptiMOS 5 Trench MOSFET OptiMOSβ„’ (Trench)
Operating Temperature Range -55C to +175C (junction) β€”
Pin Count 8 β€”
MSL Level 1 [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant
Packing Tape & Reel (T&R) β€”
FET Type β€” N-Channel
Drain-Source Voltage (V<sub>DS</sub>) β€” 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) β€” 50 A
Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) β€” 58 W
R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) β€” 11 mΞ©
Gate-Source Voltage (V<sub>GS</sub>) max β€” [DATA_NEEDED: V_GS_max]
Gate Threshold Voltage (V<sub>GS(th)</sub>) β€” [DATA_NEEDED: V_GS_th]
Total Gate Charge (Q<sub>G</sub>) β€” [DATA_NEEDED: Q_G_total]
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Polarity β€” Single N-Channel

Datasheets & Resources

Browse All Products Create BOM Request Quote