IAUCN10S7L290TATMA1 vs IAUC100N04S6N015ATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S7L290TATMA1 by Infineon and IAUC100N04S6N015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S7L290TATMA1
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 β ActiveInfineon
IAUC100N04S6N015ATMA1
IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6N015ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN10S7L290TATMA1 | IAUC100N04S6N015ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’ 7 | OptiMOS-6 40V |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at TC=25Β°C | 27 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | β |
| On-Resistance RDS(on) max @ VGS=10V | 28.6 mΞ© | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5 V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Power Dissipation (PD) at TC=25Β°C | 45 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled | PG-TDSON-8 (SSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (unlimited floor life) |
| RoHS Compliance | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Avalanche Rated | Yes | β |
| ESD Protection | HBM Class 1C (per Infineon datasheet) | β |
| Technology | β | N-Channel Trench MOSFET |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D @ T_C=25C) | β | 100 A |
| Power Dissipation (P_D @ T_C=25C) | β | 100 W |
| R_DS(on) max @ V_GS=10V | β | 1.5 mΞ© (typical, per Infineon product page) |
| Gate-Source Voltage (V_GS) max | β | Β±20 V |
| Operating Temperature Range | β | -55 C to +175 C (junction, typical) |