IAUCN10S7L290TATMA1 vs IAUCN08S7N024TATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S7L290TATMA1 by Infineon and IAUCN08S7N024TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S7L290TATMA1
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 β ActiveInfineon
IAUCN08S7N024TATMA1
IAUCN08S7N024TATMA1 - 80V 2.44mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N024TATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN10S7L290TATMA1 | IAUCN08S7N024TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $2.45 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’ 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at TC=25Β°C | 27 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | β |
| On-Resistance RDS(on) max @ VGS=10V | 28.6 mΞ© | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5 V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25Β°C | 45 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled | β |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Compliance | Compliant | β |
| Lead-Free | Yes | β |
| Avalanche Rated | Yes | β |
| ESD Protection | HBM Class 1C (per Infineon datasheet) | β |
| Series | β | OptiMOS 7 |
| FET Type | β | N-Channel |
| Technology | β | MOSFET (Metal Oxide Semiconductor) |
| Drain-Source Voltage (Vds) | β | 80 V |
| Continuous Drain Current (Id) at Tj | β | 165 A |
| Power Dissipation (Pd) at Tc | β | 157 W |
| Rds(on) Max at Vgs=10V | β | 2.44 mOhm |
| Package / Case | β | PG-LHDSO-10-1 (SSO10T, 5x7 mmΒ²) |
| Cooling | β | Top-side cooled |
| Operating Temperature Range | β | [DATA_NEEDED: operating temperature range] |
| RoHS Status | β | Compliant |
| Gate Threshold (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) typical] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss typ] |