IAUCN10S7L290TATMA1 vs IAUZN10S7L289ATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S7L290TATMA1 by Infineon and IAUZN10S7L289ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S7L290TATMA1
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 β Active
Specification Comparison
| Parameter | IAUCN10S7L290TATMA1 | IAUZN10S7L289ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’ 7 | OptiMOS-7 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at TC=25Β°C | 27 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | β |
| On-Resistance RDS(on) max @ VGS=10V | 28.6 mΞ© | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5 V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25Β°C | 45 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled | PG-TSDSON-8-44 (S3O8, 3x3 mmΒ²) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | β |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS Compliance | Compliant | Yes |
| Lead-Free | Yes | β |
| Avalanche Rated | Yes | β |
| ESD Protection | HBM Class 1C (per Infineon datasheet) | β |
| Technology | β | Trench MOSFET (N-Channel) |
| Continuous Drain Current (ID, Tj) | β | 27 A |
| Power Dissipation (Ptot, Tc=25Β°C) | β | 45 W |
| On-State Resistance (RDS(on), max, VGS=10V) | β | 28.9 mΞ© |
| Automotive Grade | β | AEC-Q100 qualified (Automotive MOSFET) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Operating Temperature Range | β | -55Β°C to +175Β°C (Tj) |
| RoHS Status | β | Compliant |
| Pin Count | β | 8 |